SI8851EDB-T2-E1

Vishay Siliconix · P-Channel

Vds (max)	20 V
Rds_on (max)	0.008 Ω
Rds_on (typ)	0.0081 Ω
Id @ 25°C	7.7 A
Vgs(th)	1 V
Vgs (max)	8 V
Qg (total)	180 nC
Ciss	6900 pF
Coss	640 pF
Crss	715 pF
Pd @ 25°C	0.66 W